The characteristics of sputtered films

Because the vacuum sputterin’s discharge current and target current can be controlled separately, so by controlling the target current can control the film thickness. Therefore, the thickness controllability and repeatability of sputtering film is relatively good and can be reliably set the thickness of the film. And the sputtering film can get the film with uniform thickness in a larger surface.

Sputtering than evaporation of atomic energy of atomic energy, the amount of 1 - 2 orders of magnitude higher. Energy conversion of the high energy of neodymium fluoride sputtered atoms deposited on the substrate is much more than the evaporation of atoms high, resulting in high heat, enhances the adhesion of the sputtered atoms and the substrate. And some of the high energy of sputtered atoms to produce different levels of injected phenomenon of pseudo-diffusion layer formed on the substrate layer of sputtered atoms and substrate atoms fused with each other. Moreover, in the film process, Zhongji piece is always in the plasma cleaning and activation, clear adhesive force is not strong sputtered atoms, purify and activate the substrate surface. Therefore, the strong adhesion of the sputtered films and the substrate.

Almost all solid sputtering into a film if the target can be metals, semiconductors, dielectrics, multi-good hormone compounds or mixtures, as long as it is a solid, or granular, powdery material can be used as the sputtering target, and does not the melting point of the constraints. Sputtering barium titanate film also allows different materials sputtering hybrid film, compound film. Subject the material order sputtering preparation of multilayer films, sputtered oxides and other insulating materials and alloys almost no decomposition and fractionation. It can be prepared oxide border membrane and compositional uniformity of the alloy film. In addition, if the sputtering of Walter reaction gas, and the target chemical reaction, which can be completely different to the target material film. For example, the use of silicon, oxygen and argon with the pass into the vacuum chamber as the sputtering target can be obtained after sputtering a Si02 insulating film; the use of titanium as a sputtering target, nitrogen and argon with Walter vacuum chamber, after splash. With the shot, it can get Tin imitation gold film.

Because sputtering film device doesn’t have crucible members in the evaporation membrane device, sputtering film will not mixed with the ingredients of crucible heater material. The disadvantage of sputtering coating is lower speed of film formation than the evaporation coating. The substrate temperature rises, it is vulnerable impacted by impurities gas and the device structure is more complex. However, because of new developments in high-frequency sputtering, magnetron sputtering in recent years, sputtering technology has been increasingly widely used.

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